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      Analysis of charge separation dynamics in a semiconductor junction

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          Analysis and Simulation of Semiconductor Devices

          Siegfried Selberherr (1984)
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            Electron and hole mobilities in silicon as a function of concentration and temperature

            J.R. Hauser, N.D. Arora, D.J. Roulston (1982)
            Article 0 comments Cited 135 times – based on 0 reviews     Review now
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              Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

              Sarah Kurtz, W Walukiewicz, K. M. Yu … (2003)
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 1098-0121
                ISSN (Electronic): 1550-235X
                Publication date Created: January 2005
                Publication date (Print): January 3 2005
                Volume: 71
                Issue: 3
                Article
                DOI: 10.1103/PhysRevB.71.035301
                SO-VID: 009a092c-b01f-44a9-9936-317b46551790
                Copyright © © 2005
                License:

                http://link.aps.org/licenses/aps-default-license

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