High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential

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Journal

Title: Advanced Materials

Abbreviated Title: Adv. Mater.

Publisher: Wiley-Blackwell

ISSN (Print): 09359648

ISSN (Electronic): 15214095

Publication date Created: October 05 2007

Publication date (Print): October 05 2007

Volume: 19

Issue: 19

Pages: 3008-3011

Article

DOI: 10.1002/adma.200701167

SO-VID: ae55f7b1-1b33-4544-b8aa-464be4d68c0c

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http://doi.wiley.com/10.1002/tdm_license_1.1

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