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      An Overview of the Ultrawide Bandgap Ga 2O 3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

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          Abstract

          Gallium oxide (Ga 2O 3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga 2O 3 semiconductor have been analyzed. And the recent investigations on the Ga 2O 3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga 2O 3-based SBD for power electronics application has been analyzed.

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          A review of Ga2O3 materials, processing, and devices

          S Pearton, Jiancheng Yang, Michael Mastro … (2018)
          Article 0 comments Cited 286 times – based on 0 reviews     Review now
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            Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

            Kohei Sasaki, Takekazu Masui, Shigenobu Yamakoshi … (2012)
            Article 0 comments Cited 266 times – based on 0 reviews     Review now
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              Oxygen vacancies in ZnO

              Anderson Janotti, Chris Van de Walle (2005)
              Article 0 comments Cited 209 times – based on 0 reviews     Review now
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                Author and article information

                Contributors
                HuiWen Xue: 2193791662@qq.com
                QiMing He: heqiming@ime.ac.cn
                GuangZhong Jian: jianguangzhong@ime.ac.cn
                ShiBing Long: shibinglong@ustc.edu.cn , longshibing@ime.ac.cn
                Tao Pang: 12773@sicau.edu.cn
                Ming Liu: Liuming@ime.ac.cn
                Journal
                Journal ID (nlm-ta): Nanoscale Res Lett
                Journal ID (iso-abbrev): Nanoscale Res Lett
                Title: Nanoscale Research Letters
                Publisher: Springer US (New York )
                ISSN (Print): 1931-7573
                ISSN (Electronic): 1556-276X
                Publication date (Electronic): 19 September 2018
                Publication date PMC-release: 19 September 2018
                Publication date Collection: 2018
                Volume: 13
                Electronic Location Identifier: 290
                Affiliations
                [1 ]ISNI 0000 0001 0185 3134, GRID grid.80510.3c, College of Mechanical and Electrical Engineering, , Sichuan Agricultural University, ; Yaan, 625014 China
                [2 ]ISNI 0000 0004 0644 7225, GRID grid.459171.f, Key Laboratory of Microelectronic Devices & Integration Technology, , Institute of Microelectronics of Chinese Academy of Sciences, ; Beijing, 100029 China
                [3 ]ISNI 0000000121679639, GRID grid.59053.3a, School of Microelectronics, , University of Science and Technology of China, ; Hefei, 230026 China
                Article
                Publisher ID: 2712
                DOI: 10.1186/s11671-018-2712-1
                PMC ID: 6145968
                PubMed ID: 30232628
                SO-VID: f8f5011f-1c65-46b6-8913-e7259b06c882
                Copyright © © The Author(s). 2018
                License:

                Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                History
                Date received : 3 August 2018
                Date accepted : 6 September 2018
                Funding
                Funded by: FundRef http://dx.doi.org/10.13039/501100001809, National Natural Science Foundation of China;
                Award ID: 61521064, 61522408, 61574169, 61334007, 61474136, and 61574166
                Funded by: FundRef http://dx.doi.org/10.13039/501100002855, Ministry of Science and Technology of the People's Republic of China;
                Award ID: 2016YFA0201803, 2016YFA0203800, and 2017YFB0405603
                Funded by: the Key Research Program of Frontier Sciences of Chinese Academy of Sciences
                Award ID: QYZDB-SSW-JSC048 and QYZDY-SSW-JSC001
                Funded by: the Beijing Municipal Science and Technology Project
                Award ID: Z171100002017011
                Funded by: the Opening Project of the Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
                Award ID: Not applicable
                Categories
                Subject: Nano Review
                Custom metadata
                issue-copyright-statement © The Author(s) 2018

                ScienceOpen disciplines: Nanomaterials
                Keywords: gallium oxide (ga2o3),ultrawide bandgap semiconductor,power device,schottky barrier diode (sbd),breakdown electric field,baliga’s figure of merit,on-resistance
                Data availability:
                ScienceOpen disciplines: Nanomaterials
                Keywords: gallium oxide (ga2o3), ultrawide bandgap semiconductor, power device, schottky barrier diode (sbd), breakdown electric field, baliga’s figure of merit, on-resistance

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