Advances in Paper‐Based Photodetectors: Fabrications, Performances, and Applications

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Abstract

With the development of wearable electronic technology, the flexible photodetectors have attracted widespread attention, and it is of great significance to develop flexible, eco‐friendly and low‐cost photodetectors. Cellulose paper, as a flexible, eco‐friendly, low‐cost, lightweight, customizable, biodegradable and renewable material, has received enthusiastic attention and rapid development in the field of photodetectors in recent years. In this review, it is focused on the research progress of paper‐based (PB) photodetectors. First, the fabrication methods of PB photodetectors are discussed, including electrode materials and optoelectronic functional materials. Then, this review systematically summarizes and analyzes the achievements of PB photodetectors on photoelectric performances (spectral response range, responsivity, detectivity, response/recovery times and on/off ratio) and flexibility characteristics (bending angle and bending cycle). In terms of key performance indicators, the PB photodetectors reported so far can detect multiple wavelengths of light from UV to near‐infrared with the maximum detectivity of 10 ¹³ Jones. In addition, the various applications of PB photodetectors is reviewed and discussed. Finally, it is look forward to the future development of PB photodetectors in terms of fabrication methods, photoelectric and flexible performances, and applications. With this review, it is hope that it will promoted the future development of PB photodetectors.

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Mingsheng Long, Peng Wang, Hehai Fang … (2019)

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Author and article information

Contributors

Zaihua Duan: (View ORCID Profile)

Huiling Tai: (View ORCID Profile)

Journal

Title: Advanced Optical Materials

Abbreviated Title: Advanced Optical Materials

Publisher: Wiley

ISSN (Print): 2195-1071

ISSN (Electronic): 2195-1071

Publication date Created: September 2024

Publication date (Electronic): July 15 2024

Publication date (Print): September 2024

Volume: 12

Issue: 27

Affiliations

[1 ] State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China (UESTC) Chengdu 611731 P. R. China

Article

DOI: 10.1002/adom.202401114

SO-VID: de723282-1a39-45c2-a7ee-707c5913f21f

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http://onlinelibrary.wiley.com/termsAndConditions#vor

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