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      A hybrid lead iodide perovskite and lead sulfide QD heterojunction solar cell to obtain a panchromatic response

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          Abstract

          We report for the first time on co-sensitization between CH3NH3PbI3 perovskite and PbS quantum dots (QDs) in a heterojunction solar cell to obtain a panchromatic response from the visible to near IR regions.

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          o-Methoxy substituents in spiro-OMeTAD for efficient inorganic-organic hybrid perovskite solar cells.

          Nam Joong Jeon, Hag Geun Lee, Young Kim … (2014)
          Three spiro-OMeTAD derivatives have been synthesized and characterized by (1)H/(13)C NMR spectroscopy and mass spectrometry. The optical and electronic properties of the derivatives were modified by changing the positions of the two methoxy substituents in each of the quadrants, as monitored by UV-vis spectroscopy and cyclic voltammetry measurements. The derivatives were employed as hole-transporting materials (HTMs), and their performances were compared for the fabrication of mesoporous TiO2/CH3NH3PbI3/HTM/Au solar cells. Surprisingly, the cell performance was dependent on the positions of the OMe substituents. The derivative with o-OMe substituents showed highly improved performance by exhibiting a short-circuit current density of 21.2 mA/cm(2), an open-circuit voltage of 1.02 V, and a fill factor of 77.6% under 1 sun illumination (100 mW/cm(2)), which resulted in an overall power conversion efficiency (PCE) of 16.7%, compared to ~15% for conventional p-OMe substituents. The PCE of 16.7% is the highest value reported to date for perovskite-based solar cells with spiro-OMeTAD.
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            Voltage output of efficient perovskite solar cells with high open-circuit voltage and fill factor

            Seungchan Ryu, Sang Seok, Jangwon Seo … (2014)
            The voltage output of perovskite solar cells is found to be dependent on both the energy level of perovskite itself as a solar absorber and hole transporting materials.
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              Depleted-heterojunction colloidal quantum dot solar cells.

              Gerasimos Konstantatos, Edward Sargent, Darryll Barkhouse … (2010)
              Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power conversion efficiencies. Two distinct device architectures and operating mechanisms have been advanced. The first-the Schottky device-was optimized and explained in terms of a depletion region driving electron-hole pair separation on the semiconductor side of a junction between an opaque low-work-function metal and a p-type CQD film. The second-the excitonic device-employed a CQD layer atop a transparent conductive oxide (TCO) and was explained in terms of diffusive exciton transport via energy transfer followed by exciton separation at the type-II heterointerface between the CQD film and the TCO. Here we fabricate CQD photovoltaic devices on TCOs and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation, and that they also exploit the large bandgap of the TCO to improve rectification and block undesired hole extraction. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS CQDs, enabling broadband harvesting of the solar spectrum. We report the highest open-circuit voltages observed in solid-state CQD solar cells to date, as well as fill factors approaching 60%, through the combination of efficient hole blocking (heterojunction) and very small minority carrier density (depletion) in the large-bandgap moiety.
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                Author and article information

                Journal
                Journal ID (publisher-id): JMCAET
                Title: J. Mater. Chem. A
                Abbreviated Title: J. Mater. Chem. A
                Publisher: Royal Society of Chemistry (RSC)
                ISSN (Print): 2050-7488
                ISSN (Electronic): 2050-7496
                Publication date Created: 2014
                Publication date (Print): 2014
                Volume: 2
                Issue: 30
                Pages: 11586-11590
                Article
                DOI: 10.1039/C4TA02711F
                SO-VID: 38b5a6cd-d843-4cd4-8e3d-c39f73b1ecb2
                Copyright © © 2014
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