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      Resonant Raman spectroscopy of twisted multilayer graphene.

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          Abstract

          Graphene and other two-dimensional crystals can be combined to form various hybrids and heterostructures, creating materials on demand with properties determined by the interlayer interaction. This is the case even for a single material, where multilayer stacks with different relative orientation have different optical and electronic properties. Probing and understanding the interface coupling is thus of primary importance for fundamental science and applications. Here we study twisted multilayer graphene flakes with multi-wavelength Raman spectroscopy. We find a significant intensity enhancement of the interlayer coupling modes (C peaks) due to resonance with new optically allowed electronic transitions, determined by the relative orientation of the layers. The interlayer coupling results in a Davydov splitting of the C peak in systems consisting of two equivalent graphene multilayers. This allows us to directly quantify the interlayer interaction, which is much smaller compared with Bernal-stacked interfaces. This paves the way to the use of Raman spectroscopy to uncover the interface coupling of two-dimensional hybrids and heterostructures.

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          Most cited references40

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          Interpretation of Raman spectra of disordered and amorphous carbon

          Physical Review B, 61(20), 14095-14107
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            Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effects

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              Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties

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                Author and article information

                Journal
                Nat Commun
                Nature communications
                Springer Science and Business Media LLC
                2041-1723
                2041-1723
                Nov 10 2014
                : 5
                Affiliations
                [1 ] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
                [2 ] Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.
                Article
                ncomms6309
                10.1038/ncomms6309
                25382099
                bcaad863-b40b-447f-8133-334f942cafc5
                History

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