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      Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching

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          Diode Lasers and Photonic Integrated Circuits

          Larry Coldren, Scott Corzine, Milan Mašanovic (2012)
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            Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

            Emmanouil Kioupakis, Patrick Rinke, Kris Delaney … (2011)
            Article 0 comments Cited 136 times – based on 0 reviews     Review now
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              Wet etching of GaN, AlN, and SiC: a review

              J.H. Edgar, D Zhuang (2005)
              Article 0 comments Cited 94 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: July 21 2014
                Publication date (Print): July 21 2014
                Volume: 105
                Issue: 3
                Page: 031111
                Article
                DOI: 10.1063/1.4890864
                SO-VID: f3dd0097-a656-41d2-900c-2df298933eae
                Copyright © © 2014
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