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      Facile synthesis of silicon nitride nanowires with flexible mechanical properties and with diameters controlled by flow rate

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          Abstract

          Ultralong Si 3N 4 nanowires (NWs) were successfully synthesized with size controlled in N 2 gas by using an efficient method. The diameters of the Si 3N 4 NWs increased when the flow rate of N 2 gas increased, with average diameters of 290 nm from flow rates of 100 ml/min, 343 nm from flow rates of 200 ml/min and 425 nm from flow rates of 400 ml/min. Young’s modulus was found to rely strongly on the diameters of the Si 3N 4 NWs, decreasing from approximately 526.0 GPa to 321.9 GPa; as the diameters increased from 360 nm to 960 nm. These findings provide a promising method for tailoring these mechanical properties of the NWs in a controlled manner over a wide range of Young’s modulus values. Vapour-liquid-solid (VLS) mechanisms were used to model the growth of Si 3N 4 NWs on the inner wall of an alumina crucible and on the surface of the powder mixture. Alumina may be an effective mediator of NW growth that plays an important role in controlling the concentrations of Si-containing reactants to support the growth of NWs on the inner wall of the alumina crucible. This approach offers a valuable means for preparing ultralong Si 3N 4 NWs doped with Al with unique properties.

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          A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates.

          We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance "wavy" metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.
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            Calculated elastic constants for stress problems associated with semiconductor devices

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              Controlled buckling of semiconductor nanoribbons for stretchable electronics.

              Control over the composition, shape, spatial location and/or geometrical configuration of semiconductor nanostructures is important for nearly all applications of these materials. Here we report a mechanical strategy for creating certain classes of three-dimensional shapes in nanoribbons that would be difficult to generate in other ways. This approach involves the combined use of lithographically patterned surface chemistry to provide spatial control over adhesion sites, and elastic deformations of a supporting substrate to induce well-controlled local displacements. We show that precisely engineered buckling geometries can be created in nanoribbons of GaAs and Si in this manner and that these configurations can be described quantitatively with analytical models of the mechanics. As one application example, we show that some of these structures provide a route to electronics (and optoelectronics) with extremely high levels of stretchability (up to approximately 100%), compressibility (up to approximately 25%) and bendability (with curvature radius down to approximately 5 mm).
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                28 March 2017
                2017
                : 7
                : 45538
                Affiliations
                [1 ]Science and Technology on Advanced Composites in Special Environment Laboratory, Harbin Institute of Technology , Harbin 150001, PR China
                Author notes
                Article
                srep45538
                10.1038/srep45538
                5368666
                ec9a78bd-e8d3-46d6-a0aa-f3d035a57675
                Copyright © 2017, The Author(s)

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 11 November 2016
                : 01 March 2017
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