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RTN and low frequency noise on ultra-scaled near-ballistic Ge nanowire nMOSFETs
Author(s):
W. Wangran
,
H. Wu
,
M. Si
,
N. CONRAD
,
Z YI
,
P.D. Ye
Publication date:
Journal:
Proceedings of the 2016 IEEE Symposium on VLSI Technology
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