A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation

Wernersson, L-E; Kabeer, S.; Zela, V.; Lind, E.; Zhang, J.; Seifert, W.; Kosel, T.H.; Seabaugh, Alan

doi:10.1109/TNANO.2005.851426

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A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation

Author(s): L.-E. Wernersson , S. Kabeer , V. Zela , E. Lind , J. Zhang , W. Seifert , T.H. Kosel , A. Seabaugh

Publication date Created: September 2005

Publication date (Print): September 2005

Journal: IEEE Transactions On Nanotechnology

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 11

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Effective mass for strainedp‐type Si1−xGex

A. Nathan, T. Manku (1991)

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Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

P.R. Berger, P.E. Thompson, K.D. Hobart … (1999)

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Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio

O. G. Schmidt, K Eberl, R Duschl (2000)

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Author and article information

Journal

Title: IEEE Transactions On Nanotechnology

Abbreviated Title: IEEE Trans. Nanotechnology

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 1536-125X

Publication date Created: September 2005

Publication date (Print): September 2005

Volume: 4

Issue: 5

Pages: 594-598

Article

DOI: 10.1109/TNANO.2005.851426

SO-VID: 7eec0d6f-5948-46c6-b136-827776c3fd37

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