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      Self-powered and broadband opto-sensor with bionic visual adaptation function based on multilayer γ-InSe flakes

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          Abstract

          Visual adaptation that can autonomously adjust the response to light stimuli is a basic function of artificial visual systems for intelligent bionic robots. To improve efficiency and reduce complexity, artificial visual systems with integrated visual adaptation functions based on a single device should be developed to replace traditional approaches that require complex circuitry and algorithms. Here, we have developed a single two-terminal opto-sensor based on multilayer γ-InSe flakes, which successfully emulated the visual adaptation behaviors with a new working mechanism combining the photo-pyroelectric and photo-thermoelectric effect. The device can operate in self-powered mode and exhibit good human-eye-like adaptation behaviors, which include broadband light-sensing image adaptation (from ultraviolet to near-infrared), near-complete photosensitivity recovery (99.6%), and synergetic visual adaptation, encouraging the advancement of intelligent opto-sensors and machine vision systems.

          Abstract

          A single two-terminal opto-sensor based on multilayer γ-InSe flakes was developed and successfully emulated human-eye-like adaptation behaviors, which could motivate the further development of advanced opto-sensors and artificial visual systems.

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          High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

          Encapsulated few-layer InSe exhibits a remarkably high electronic quality, which is promising for the development of ultrathin-body high-mobility nanoelectronics.
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            Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe.

            Atomic layers of two-dimensional (2D) materials have recently been the focus of extensive research. This follows from the footsteps of graphene, which has shown great potential for ultrathin optoelectronic devices. In this paper, we present a comprehensive study on the synthesis, characterization, and thin film photodetector application of atomic layers of InSe. Correlation between resonance Raman spectroscopy and photoconductivity measurements allows us to systematically track the evolution of the electronic band structure of 2D InSe as its thickness approaches few atomic layers. Analysis of photoconductivity spectra suggests that few-layered InSe has an indirect band gap of 1.4 eV, which is 200 meV higher than bulk InSe due to the suppressed interlayer electron orbital coupling. Temperature-dependent photocurrent measurements reveal that the suppressed interlayer interaction also results in more localized pz-like orbitals, and these orbitals couple strongly with the in-plane E' and E″ phonons. Finally, we measured a strong photoresponse of 34.7 mA/W and fast response time of 488 μs for a few layered InSe, suggesting that it is a good material for thin film optoelectronic applications.
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              Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

              Piezoelectric and ferroelectric properties in the two-dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nanoflakes. The noncentrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nanoflakes with thicknesses down to ∼10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.
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                Author and article information

                Contributors
                liyz264@nenu.edu.cn
                hyxu@nenu.edu.cn
                Journal
                Light Sci Appl
                Light Sci Appl
                Light, Science & Applications
                Nature Publishing Group UK (London )
                2095-5545
                2047-7538
                24 July 2023
                24 July 2023
                2023
                : 12
                : 180
                Affiliations
                [1 ]GRID grid.27446.33, ISNI 0000 0004 1789 9163, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, , Northeast Normal University, ; 130024 Changchun, China
                [2 ]GRID grid.9227.e, ISNI 0000000119573309, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, , Chinese Academy of Sciences, ; No. 3888 Dongnanhu Road, Changchun, China
                Author information
                http://orcid.org/0000-0002-4309-0160
                http://orcid.org/0000-0002-1887-7535
                Article
                1223
                10.1038/s41377-023-01223-1
                10366227
                37488112
                061464c4-33ea-42eb-a286-f3c84313265d
                © The Author(s) 2023

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 27 March 2023
                : 25 June 2023
                : 4 July 2023
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100001809, National Natural Science Foundation of China (National Science Foundation of China);
                Award ID: 52025022
                Award ID: 51732003
                Award ID: 51872043
                Award ID: 61604037
                Award ID: U19A2091
                Award ID: 12004069
                Award ID: 12274065
                Award Recipient :
                Funded by: the Fund from Jilin Province (Nos. YDZJ202101ZYTS049, YDZJ202101ZYTS041, and YDZJ202101ZYTS133).
                Funded by: National Key Research and Development Program of China (No. 2019YFB2205100, 2021YFA0716400)
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                © Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), CAS 2023

                photonic devices,optical sensors
                photonic devices, optical sensors

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