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Ferroelectric Memories
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Author(s):
James F. Scott
Publication date
(Print):
2000
Publisher:
Springer Berlin Heidelberg
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Book
ISBN (Print):
978-3-642-08565-9
ISBN (Electronic):
978-3-662-04307-3
Publication date (Print):
2000
DOI:
10.1007/978-3-662-04307-3
SO-VID:
4debd8c4-675e-4694-8d20-786b89a20694
License:
http://www.springer.com/tdm
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Book chapters
pp. 1
Introduction
pp. 23
Basic Properties of RAMs (Random Access Memories)
pp. 53
Electrical Breakdown (DRAMs and NV-RAMs)
pp. 79
Leakage Currents
pp. 95
Capacitance—Voltage Data: C(V)
pp. 121
Switching Kinetics
pp. 133
Charge Injection and Fatigue
pp. 145
Frequency Dependence
pp. 149
Phase Sequences in Processing
pp. 153
SBT-Family Aurivillius-Phase Layer Structures
pp. 165
Deposition and Processing
pp. 175
Nondestructive Read-Out Devices
pp. 179
Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10–100 GHz Devices
pp. 185
Wafer Bonding
pp. 189
Electron-Emission and Flat-Panel Displays
pp. 191
Optical Devices
pp. 193
Nanophase Devices
pp. 209
Drawbacks and Disadvantages
pp. 217
Exercises
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